( DataSheet : www.DataSheet4U.com )
PD - 95467
AUTOMOTIVE MOSFET
Typical Applications
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IRF3808SPbF IRF3808LPbF
D...
( DataSheet : www.DataSheet4U.com )
PD - 95467
AUTOMOTIVE
MOSFET
Typical Applications
● ● ●
IRF3808SPbF IRF3808LPbF
D
Integrated Starter Alternator 42 Volts Automotive Electrical Systems Lead-Free Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax
HEXFET® Power
MOSFET VDSS = 75V RDS(on) = 0.007Ω
S
Benefits
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G
ID = 106A
Description
Absolute Maximum Ratings
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG
Designed specifically for Automotive applications, this Advanced Planar Stripe HEXFET ® Power
MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power
MOSFET are a 175°C junction operating temperature, low RθJC, fast switching speed and improved repetitive avalanche rating. This combination makes the design an extremely efficient and reliable choice for use in higher power Automotive electronic systems and a wide variety of other applications.
Parameter
Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source
Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
D2Pak IRF3808S
TO-262 IRF3808L
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