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IRF541 Datasheet

Part Number IRF541
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description N-Channel Mosfet Transistor
Datasheet IRF541 DatasheetIRF541 Datasheet (PDF)

INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification IRF541 ·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements ·DESCRITION ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-C.

  IRF541   IRF541






Part Number IRF541
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description N-Channel MOSFET
Datasheet IRF541 DatasheetIRF541 Datasheet (PDF)

IRF 540/FI-541/FI IRF 542/FI-543/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF540 IRF540FI IRF541 IRF541FI IRF542 IRF542FI IRF543 IRF543FI Voss 100 V 100 V 80 V 80 V 100 V 100 V 80 V 80 V RoS(on) 0.077 n 0.077 n 0.077 n 0.077 n 0.100 n 0.100 n 0.100 n 0.100 n 10 • 28 A 15 A 28 A 15 A 25 A 14 A 25 A 14 A e 80-100 VOLTS - FOR DC/DC CONVERTERS e HIGH CURRENT e ULTRA FAST SWITCHING e EASY DRIVE- FOR REDUCED COST AND SIZE INDUSTRIAL APPLICATIONS: e UNINTERRUPTIBLE POWER SUPPLIES.

  IRF541   IRF541







Part Number IRF541
Manufacturers Harris
Logo Harris
Description N-Channel Power MOSFETs
Datasheet IRF541 DatasheetIRF541 Datasheet (PDF)

Semiconductor IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM 25A and 28A, 80V and 100V, 0.077 and 0.100 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field eff ect tr ansistors. The y are adv anced po wer MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdo wn avalanche mode of operation. All of these po wer MOSFETs are designed f or applications such as s witching regulators, switching convertors, .

  IRF541   IRF541







Part Number IRF541
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel Power MOSFET
Datasheet IRF541 DatasheetIRF541 Datasheet (PDF)

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  IRF541   IRF541







N-Channel Mosfet Transistor

INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification IRF541 ·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements ·DESCRITION ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 80 ±20 V V ID Drain Current-Continuous 28 A IDM Drain Current-Single Plused 110 A PD Total Dissipation @TC=25℃ 150 W Tj Max. Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 80 ℃/W isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification IRF541 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA VGS(th) Gate Threshold Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current VDS= VGS; ID= 0.25mA VGS= 10V; ID= 17A VGS= ±20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 80V; VGS=0 VSD Forward On-Voltage IS= 27A; VGS=0 Ciss Input C.


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