Transistor. IRF610 Datasheet

IRF610 Datasheet PDF

Part IRF610
Description N-Channel Mosfet Transistor
Feature INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification IRF610 ·FEATURES .
Manufacture Inchange Semiconductor
Datasheet
Download IRF610 Datasheet

IRF610 Data Sheet June 1999 File Number 1576.3 3.3A, 200V, IRF610 Datasheet
IRF610 Datasheet
IRF610 Datasheet
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IRF610
INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
IRF610
·FEATURES
·Low RDS(on)
·VGS Rated at ±20V
·Silicon Gate for Fast Switching Speed
·Rugged
·Low Drive Requirements
·DESCRITION
·Designed especially for high voltage,high speed applications,
such as off-line switching power supplies , UPS,AC and DC
motor controls,relay and solenoid drivers.
·ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
VGS
Drain-Source Voltage
Gate-Source Voltage-Continuous
200
±20
V
V
ID Drain Current-Continuous
3.3 A
IDM Drain Current-Single Plused
8A
PD Total Dissipation @TC=25
43 W
Tj Max. Operating Junction Temperature -55~175
Tstg Storage Temperature
-55~175
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
2.9 /W
Rth j-a Thermal Resistance,Junction to Ambient 80 /W
isc websitewww.iscsemi.cn
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IRF610
INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
IRF610
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
VGS(th) Gate Threshold Voltage
RDS(on) Drain-Source On-Resistance
IGSS Gate-Body Leakage Current
VDS= VGS; ID= 0.25mA
VGS= 10V; ID= 1.6A
VGS= ±20V;VDS= 0
IDSS Zero Gate Voltage Drain Current
VDS= 200V; VGS=0
VSD Forward On-Voltage
IS= 3.3A; VGS=0
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS=25V,VGS=0V,
F=1.0MHz
MIN MAX UNIT
200 V
24V
1.5 Ω
±500
nA
250 uA
2.0 V
200 pF
80 pF
25 pF
·SWITCHING CHARACTERISTICS (TC=25)
SYMBOL
PARAMETER
CONDITIONS
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
VDD=100V,ID=3.3A
VGS=10V,RGEN=24Ω
RGS=24Ω
Tf Fall Time
MIN TYP MAX UNIT
8 12 ns
17 26 ns
13 21 ns
9 13 ns
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark
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