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IRF6100

International Rectifier

HEXFET Power MOSFET


Description
l Ultra Low RDS(on) per Footprint Area l Low Thermal Resistance l P-Channel MOSFET l One-third Footprint of SOT-23 l Super Low Profile (<.8mm) l Available Tested on Tape & Reel VDSS -20V PD - 93930F IRF6100 HEXFET® Power MOSFET RDS(on) max 0.065Ω@VGS = -4.5V 0.095Ω@VGS = -2.5V ID -5.1A -4.1A Description True chip-scale packaging is available from Inte...



International Rectifier

IRF6100

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