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IRF610B Datasheet

Part Number IRF610B
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description 200V N-Channel MOSFET
Datasheet IRF610B DatasheetIRF610B Datasheet (PDF)

IRF610B/IRFS610B IRF610B/IRFS610B 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode po.

  IRF610B   IRF610B






Part Number IRF610S
Manufacturers Vishay
Logo Vishay
Description Power MOSFET
Datasheet IRF610B DatasheetIRF610S Datasheet (PDF)

www.vishay.com IRF610S, SiHF610S, IRF610L, SiHF610L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 200 VGS = 10 V 8.2 1.8 4.5 Single 1.5 I2PAK (TO-262) D2PAK (TO-263) D G DS G D S G S N-Channel MOSFET FEATURES • Surface mount • Available in tape and reel • Dynamic dV/dt rating • Repetitive avalanche rated Available • Fast switching • Ease of paralleling Available • Simple drive requirements • Material categor.

  IRF610B   IRF610B







Part Number IRF610L
Manufacturers Vishay
Logo Vishay
Description Power MOSFET
Datasheet IRF610B DatasheetIRF610L Datasheet (PDF)

www.vishay.com IRF610S, SiHF610S, IRF610L, SiHF610L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 200 VGS = 10 V 8.2 1.8 4.5 Single 1.5 I2PAK (TO-262) D2PAK (TO-263) D G DS G D S G S N-Channel MOSFET FEATURES • Surface mount • Available in tape and reel • Dynamic dV/dt rating • Repetitive avalanche rated Available • Fast switching • Ease of paralleling Available • Simple drive requirements • Material categor.

  IRF610B   IRF610B







Part Number IRF610A
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description N-Channel Mosfet Transistor
Datasheet IRF610B DatasheetIRF610A Datasheet (PDF)

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF610A FEATURES ·Low RDS(on) = 1.25Ω(TYP) ·Lower Input Capacitance ·Improved Gate Charge ·Extended Safe Operating Area ·Rugged Gate Oxide Technology DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single .

  IRF610B   IRF610B







Part Number IRF610A
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description Advanced Power MOSFET
Datasheet IRF610B DatasheetIRF610A Datasheet (PDF)

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V Low RDS(ON) : 1.169 Ω (Typ.) 1 2 3 IRF610A BVDSS = 200 V RDS(on) = 1.5 Ω ID = 3.3 A TO-220 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM www.DataSheet4U.com Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C ) ) Continuous Drain Current (.

  IRF610B   IRF610B







200V N-Channel MOSFET

IRF610B/IRFS610B IRF610B/IRFS610B 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control. Features • • • • • • 3.3A, 200V, RDS(on) = 1.5Ω @VGS = 10 V Low gate charge ( typical 7.2 nC) Low Crss ( typical 6.8 pF) Fast switching 100% avalanche tested Improved dv/dt capability D G G DS TO-220 IRF Series GD S TO-220F IRFS Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) IRF610B 200 3.3 2.1 10 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) IRFS610B 3.3 * 2.1 * 10 * 40 3.3 3.8 5.5 Units V A A A V mJ A mJ V/ns W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case.


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