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IRF610S Datasheet

Part Number IRF610S
Manufacturers Vishay
Logo Vishay
Description Power MOSFET
Datasheet IRF610S DatasheetIRF610S Datasheet (PDF)

www.vishay.com IRF610S, SiHF610S, IRF610L, SiHF610L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 200 VGS = 10 V 8.2 1.8 4.5 Single 1.5 I2PAK (TO-262) D2PAK (TO-263) D G DS G D S G S N-Channel MOSFET FEATURES • Surface mount • Available in tape and reel • Dynamic dV/dt rating • Repetitive avalanche rated Available • Fast switching • Ease of paralleling Available • Simple drive requirements • Material categor.

  IRF610S   IRF610S






Part Number IRF610L
Manufacturers Vishay
Logo Vishay
Description Power MOSFET
Datasheet IRF610S DatasheetIRF610L Datasheet (PDF)

www.vishay.com IRF610S, SiHF610S, IRF610L, SiHF610L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 200 VGS = 10 V 8.2 1.8 4.5 Single 1.5 I2PAK (TO-262) D2PAK (TO-263) D G DS G D S G S N-Channel MOSFET FEATURES • Surface mount • Available in tape and reel • Dynamic dV/dt rating • Repetitive avalanche rated Available • Fast switching • Ease of paralleling Available • Simple drive requirements • Material categor.

  IRF610S   IRF610S







Part Number IRF610B
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description 200V N-Channel MOSFET
Datasheet IRF610S DatasheetIRF610B Datasheet (PDF)

IRF610B/IRFS610B IRF610B/IRFS610B 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode po.

  IRF610S   IRF610S







Part Number IRF610A
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description N-Channel Mosfet Transistor
Datasheet IRF610S DatasheetIRF610A Datasheet (PDF)

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF610A FEATURES ·Low RDS(on) = 1.25Ω(TYP) ·Lower Input Capacitance ·Improved Gate Charge ·Extended Safe Operating Area ·Rugged Gate Oxide Technology DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single .

  IRF610S   IRF610S







Part Number IRF610A
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description Advanced Power MOSFET
Datasheet IRF610S DatasheetIRF610A Datasheet (PDF)

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V Low RDS(ON) : 1.169 Ω (Typ.) 1 2 3 IRF610A BVDSS = 200 V RDS(on) = 1.5 Ω ID = 3.3 A TO-220 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM www.DataSheet4U.com Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C ) ) Continuous Drain Current (.

  IRF610S   IRF610S







Power MOSFET

www.vishay.com IRF610S, SiHF610S, IRF610L, SiHF610L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 200 VGS = 10 V 8.2 1.8 4.5 Single 1.5 I2PAK (TO-262) D2PAK (TO-263) D G DS G D S G S N-Channel MOSFET FEATURES • Surface mount • Available in tape and reel • Dynamic dV/dt rating • Repetitive avalanche rated Available • Fast switching • Ease of paralleling Available • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details. DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. ORDERING INFORMATION Package Lead (Pb)-free and halogen-free Lead (P.


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