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Transistor. IRF620 Datasheet



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Transistor. IRF620 Datasheet








IRF620 Datasheet PDF





IRF620 Datasheet PDF


Part Number

IRF620

Description

N-Channel Mosfet Transistor

Feature INCHANGE Semiconductor isc N-Channel Mos fet Transistor ·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate fo r Fast Switching Speed ·Rugged ·Low D rive Requirements isc Product Specific ation IRF620 ·DESCRITION ·Designed f or high speed applications, such as swi tching power supplies , AC and DC motor controls,relay and solenoid drivers an d other pulse. ·ABSOLUTE M.
Manufacture

Inchange Semiconductor

Datasheet
Download IRF620 Datasheet

IRF620












Part Number

IRF620

Description

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

Feature IRF620 IRF620FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF620 IRF620FI s s s s V DSS 200 V 200 V R DS( on) < 0.8 Ω < 0.8 Ω ID 6A 4A TYPICAL RDS(on) = 0.55 Ω AVALANCHE RU GGED TECHNOLOGY 100% AVALANCHE TESTED R EPETITIVE AVALANCHE DATA AT 100oC 3 1 2 1 3 2 APPLICATIONS s HIGH CURRENT, HI GH SPEED SWITCHING s UNINTERRUPTIBLE PO WER SUPPLY (UPS) s MOTOR.
Manufacture

STMicroelectronics

Datasheet
Download IRF620 Datasheet

IRF620









Part Number

IRF620

Description

N-Channel Power MOSFET

Feature IRF620 Data Sheet June 1999 File Number 1577.3 5.0A, 200V, 0.800 Ohm, N-Channe l Power MOSFET This N-Channel enhanceme nt mode silicon gate power field effec t transistor is an advanced power MOSFE T designed, tested, and guaranteed to w ithstand a specified level of energy i n the breakdown avalanche mode of opera tion. All of these power MOSFETs are de signed for application.
Manufacture

Intersil Corporation

Datasheet
Download IRF620 Datasheet

IRF620



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