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IRF630 Datasheet

Part Number IRF630
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description N-channel mosfet transistor
Datasheet IRF630 DatasheetIRF630 Datasheet (PDF)

MOSFET IRF630 N-channel mosfet transistor INCHANGE ‹ Features With TO-220 package Low on-state and thermal resistance Fast switching V DSS=200V; RDS(ON)0.4 ;I D=9A 1.gate 2.drain 3.source ‹ Absolute Maximum Ratings Tc=25 SYMBOL VDSS VGS ID Ptot Tj Tstg PARAMETER Drain-source voltage (VGS=0) Gate-source voltage Drain Current-continuous@ TC=25 Total Dissipation@TC=25 Max. Operating Junction temperature Storage temperature RATING 200 20 9 74 150 -65~150 UNIT V V A W 123 TO-220 ‹ Electrical .

  IRF630   IRF630






Part Number IRF630
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description N-channel MOSFET
Datasheet IRF630 DatasheetIRF630 Datasheet (PDF)

IRF630 Datasheet N-channel 200 V, 0.29 Ω typ., 9 A, STripFET™ Power MOSFET in a TO‑220 package TAB TO-220 1 23 Features Order code VDS IRF630 200 V • Extremely high dv/dt capability • Very low intrinsic capacitance • Gate charge minimized RDS(on) max. 0.40 Ω ID 9A D(2, TAB) Applications • Switching applications G(1) S(3) AM01475v1_noZen Description This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input c.

  IRF630   IRF630







Part Number IRF630
Manufacturers Advanced Power Electronics
Logo Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet IRF630 DatasheetIRF630 Datasheet (PDF)

Advanced Power Electronics Corp. ▼ Ease of Paralleling ▼ Fast Switching Characteristic ▼ Simple Drive Requirement IRF630 RoHS-compliant Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS 200V RDS(ON) 0.4Ω G ID 9.0A S Description APEC MOSFET provide the power designer with the best combination of fast switching , lower on-resistance and reasonable cost. The TO-220 and package is universally preferred for all commercial-industrial applications. The device is suited for switch mode pow.

  IRF630   IRF630







Part Number IRF630
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel Power MOSFET
Datasheet IRF630 DatasheetIRF630 Datasheet (PDF)

Data Sheet IRF630, RF1S630SM January 2002 9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar swi.

  IRF630   IRF630







Part Number IRF630
Manufacturers Vishay
Logo Vishay
Description Power MOSFET
Datasheet IRF630 DatasheetIRF630 Datasheet (PDF)

www.vishay.com IRF630 Vishay Siliconix Power MOSFET D TO-220AB S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 200 VGS = 10 V 43 7.0 23 Single 0.40 ORDERING INFORMATION Package Lead (Pb)-free Lead (Pb)-free and halogen-free FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated Available • Fast switching Available • Ease of paralleling • Simple drive requirements Available • Material categorization: for definitio.

  IRF630   IRF630







N-channel mosfet transistor

MOSFET IRF630 N-channel mosfet transistor INCHANGE ‹ Features With TO-220 package Low on-state and thermal resistance Fast switching V DSS=200V; RDS(ON)0.4 ;I D=9A 1.gate 2.drain 3.source ‹ Absolute Maximum Ratings Tc=25 SYMBOL VDSS VGS ID Ptot Tj Tstg PARAMETER Drain-source voltage (VGS=0) Gate-source voltage Drain Current-continuous@ TC=25 Total Dissipation@TC=25 Max. Operating Junction temperature Storage temperature RATING 200 20 9 74 150 -65~150 UNIT V V A W 123 TO-220 ‹ Electrical Characteristics Tc=25 SYMBOL PARAMETER V(BR)DSS Drain-source breakdown voltage CONDITIONS VGS=0; ID=0.25mA VGS(TH) Gate threshold voltage VDS= VGS; ID=1mA RDS(ON) Drain-source on-stage resistance VGS=10V; ID=5.4A IGSS Gate source leakage current VGS=20V ;VDS=0 IDSS Zero gate voltage drain current VDS=200V; VGS=0 VSD Diode forward voltage IF=9A; VGS=0 MIN MAX UNIT 200 V 2 4V 400 m 100 nA 10 uA 1.2 V .


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