INCHANGE Semiconductor
isc Product Specification
isc N-Channel MOSFET Transistor
IRF630A
DESCRIPTION ·Drain Current ...
INCHANGE Semiconductor
isc Product Specification
isc N-Channel
MOSFET Transistor
IRF630A
DESCRIPTION ·Drain Current –ID=9A@ TC=25℃ ·Drain Source
Voltage: VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) ·Fast Switching Speed ·Low Drive Requirement APPLICATIONS ·This device is n-channel, enhancement mode, power
MOSFET designed especially for high power, high speed applications, such as switching power supplies,UPS, AC and DC motor controls, relay and solenoid drivers and high energy pulse circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL VDSS VGS ID Ptot Tj Tstg
ARAMETER
Drain-Source
Voltage (VGS=0) Gate-Source
Voltage
Drain Current-continuous@ TC=25℃ Total Dissipation@TC=25℃ Max. Operating Junction Temperature Storage Temperature Range
w
ww
s c s .i
VALUE 200 ±30 9 72 150 -55~150
n c . i m e
UNIT V V A W ℃ ℃
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.74 62.5 UNIT ℃/W ℃/W
Rth j-a Thermal Resistance,Junction to Ambient www.DataSheet4U.com
isc Website:www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc N-Channel
Mosfet Transistor
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL V(BR)DSS VGS(TH) RDS(ON) IGSS IDSS VSD PARAMETER Drain-Source Breakdown
Voltage Gate Threshold
Voltage Drain-Source On-stage Resistance Gate Source Leakage Current Zero Gate
Voltage Drain Current Diode Forward
Voltage CONDITIONS VGS= 0; ID= 0.25mA VDS= VGS; ID= 0.25mA VGS= 10V; ID= 4.5A VGS= ±30V;VDS= 0 VDS...