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IRF645 Datasheet

Part Number IRF645
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description N-Channel Mosfet Transistor
Datasheet IRF645 DatasheetIRF645 Datasheet (PDF)

INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification IRF645 ·FEATURES ·Avalanche Rugged Technology ·Rugged Gate Oxide Technology ·Lower Input Capacitance ·Improved Gate Charge ·Extended Safe Operating Area ·Lower Leakage Current: 10mA (Max.) @ VDS = 250V ·DESCRITION ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYM.

  IRF645   IRF645






Part Number IRF647
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description N-Channel Mosfet Transistor
Datasheet IRF645 DatasheetIRF647 Datasheet (PDF)

INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification IRF647 ·FEATURES ·Avalanche Rugged Technology ·Rugged Gate Oxide Technology ·Lower Input Capacitance ·Improved Gate Charge ·Extended Safe Operating Area ·Lower Leakage Current: 10mA (Max.) @ VDS = 250V ·DESCRITION ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYM.

  IRF645   IRF645







Part Number IRF646
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description N-Channel Mosfet Transistor
Datasheet IRF645 DatasheetIRF646 Datasheet (PDF)

INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification IRF646 ·FEATURES ·14A, 275V ·RDS(ON) = 0.280Ω ·Single Pulse Avalanche Energy Rated ·SOA is Power Dissipation Limited ·Nanosecond Switching Speeds ·High Input Impedance ·275V DC Rating-120V AC Line System Operation ·DESCRITION ·designed for applications such as switching regulators, switching convertors, motor drivers,relay drivers, and drivers for high power bipolar switching transistors requiring high speed and l.

  IRF645   IRF645







Part Number IRF646
Manufacturers Intersil Corporation
Logo Intersil Corporation
Description N-Channel Power MOSFET
Datasheet IRF645 DatasheetIRF646 Datasheet (PDF)

IRF646 Data Sheet June 1999 File Number 2169.3 14A, 275V, 0.280 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching tr.

  IRF645   IRF645







Part Number IRF644S
Manufacturers Vishay
Logo Vishay
Description Power MOSFET
Datasheet IRF645 DatasheetIRF644S Datasheet (PDF)

Power MOSFET IRF644S, SiHF644S Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 250 VGS = 10 V 68 11 35 Single 0.28 D2PAK (TO-263) K D G DS G S N-Channel MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC DESCRIPTIO.

  IRF645   IRF645







N-Channel Mosfet Transistor

INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification IRF645 ·FEATURES ·Avalanche Rugged Technology ·Rugged Gate Oxide Technology ·Lower Input Capacitance ·Improved Gate Charge ·Extended Safe Operating Area ·Lower Leakage Current: 10mA (Max.) @ VDS = 250V ·DESCRITION ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 250 ±20 V V ID Drain Current-Continuous 13 A IDM Drain Current-Single Plused 52 A PD Total Dissipation @TC=25℃ 125 W Tj Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c RθJA Thermal Resistance,Junction to Case Junction-to-Ambient MAX UNIT 1.0 ℃/W 80 ℃/W isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification IRF645 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA VGS(th) Gate Threshold Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current VDS= VGS; ID= 0.25mA VGS= 10V; ID= 8A VGS= ±20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 250V; V.


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