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IRF6636TRPBF Datasheet

Part Number IRF6636TRPBF
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet IRF6636TRPBF DatasheetIRF6636TRPBF Datasheet (PDF)

PD - 97219 IRF6636PbF IRF6636TRPbF l l l l l l l l l RoHs Compliant  Lead-Free (Qualified up to 260°C Reflow) Application Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses High Cdv/dt Immunity Low Profile (<0.7mm) Dual Sided Cooling Compatible  Compatible with existing Surface Mount Techniques  DirectFET™ Power MOSFET ‚ Typical values (unless otherwise specified) VDSS Qg tot VGS Qgd 6.1nC RDS(on) Qgs2 1.9nC RDS(on) Qoss 10nC 20V max ±20V max 3.2mΩ@ 10V 4.6mΩ@ .

  IRF6636TRPBF   IRF6636TRPBF






Power MOSFET

PD - 97219 IRF6636PbF IRF6636TRPbF l l l l l l l l l RoHs Compliant  Lead-Free (Qualified up to 260°C Reflow) Application Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses High Cdv/dt Immunity Low Profile (<0.7mm) Dual Sided Cooling Compatible  Compatible with existing Surface Mount Techniques  DirectFET™ Power MOSFET ‚ Typical values (unless otherwise specified) VDSS Qg tot VGS Qgd 6.1nC RDS(on) Qgs2 1.9nC RDS(on) Qoss 10nC 20V max ±20V max 3.2mΩ@ 10V 4.6mΩ@ 4.5V Qrr 7.3nC Vgs(th) 1.8V 18nC ST Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST MQ MX MT DirectFET™ ISOMETRIC Description The IRF6636PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6636PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make th.


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