PD - 97243A
DirectFET™ Power MOSFET
RoHs Compliant Lead-Free (Qualified up to 260°C Reflow) Application Specific MOSFET...
PD - 97243A
DirectFET™ Power
MOSFET
RoHs Compliant Lead-Free (Qualified up to 260°C Reflow) Application Specific
MOSFETs Ideal for High Performance Isolated Converter Primary Switch Socket Optimized for Synchronous Rectification Low Conduction Losses High Cdv/dt Immunity Low Profile (<0.7mm) Dual Sided Cooling Compatible Compatible with existing Surface Mount Techniques
IRF6662PbF IRF6662TRPbF
RDS(on)
17.5mΩ@ 10V
Typical values (unless otherwise specified)
VDSS Qg
tot
VGS Qgd
6.8nC
100V max ±20V max
Qgs2
1.2nC
Qrr
50nC
Qoss
11nC
Vgs(th)
3.9V
22nC
S D G S D
MZ
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ SX ST MQ MX MT MZ
DirectFET™ ISOMETRIC
Description
The IRF6662PbF combines the latest HEXFET® Power
MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6662PbF is optimized for primary side bridge topologies in isolated DC-DC applications, for wide range universal input Telecom applications...