l RoHS Compliant and Halogen Free l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Ultra Low Package Induct...
l RoHS Compliant and Halogen Free l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Ultra Low Package Inductance l Optimized for High Frequency Switching l Ideal for CPU Core DC-DC Converters l Optimized for Control FET Application l Compatible with existing Surface Mount Techniques l 100% Rg tested
PD - 97328A
IRF6709S2TRPbF
IRF6709S2TR1PbF
DirectFET Power
MOSFET
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
RDS(on)
25V max ±20V max 5.9mΩ@10V 10.1mΩ@4.5V
Qg tot Qgd
Qgs2
Qrr
Qoss Vgs(th)
8.1nC 2.8nC 1.1nC 9.3nC 4.6nC 1.8V
Applicable DirectFET Outline and Substrate Outline
S1 DirectFET ISOMETRIC
S1 S2 SB
M2 M4
L4 L6 L8
Description
The IRF6709S2TRPbF combines the latest HEXFET® Power
MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6709S2TRPbF has low charge along with ultra low package inductance providing significant reduction in switching losses. The reduced losses make this ...