PD - 97320A
IRF6797MPbF
IRF6797MTRPbF
HEXFET® Power MOSFET plus Schottky Diode
l RoHs Compliant Containing No Lead ...
PD - 97320A
IRF6797MPbF
IRF6797MTRPbF
HEXFET® Power
MOSFET plus Schottky Diode
l RoHs Compliant Containing No Lead and Bromide l Integrated Monolithic Schottky Diode
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
RDS(on)
l Low Profile (<0.7 mm)
25V max ±20V max 1.1mΩ@ 10V 1.8mΩ@ 4.5V
l Dual Sided Cooling Compatible l Ultra Low Package Inductance l Optimized for High Frequency Switching
Qg tot
45nC
Qgd
13nC
Qgs2
6.2nC
Qrr
38nC
Qoss
38nC
Vgs(th)
1.8V
l Ideal for CPU Core DC-DC Converters
l Optimized for Sync. FET socket of Sync. Buck Converter
l Low Conduction and Switching Losses
l Compatible with existing Surface Mount Techniques
l 100% Rg tested
MX
DirectFET ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ SX ST
MQ MX MT MP
Description
The IRF6797MPbF combines the latest HEXFET® Power
MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6797M...