isc N-Channel Mosfet Transistor
·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugge...
isc N-Channel
Mosfet Transistor
·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Designed especially for high
voltage,high speed applications,
such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source
Voltage
400
V
VGS
Gate-Source
Voltage-Continuous
±20
V
ID
Drain Current-Continuous
2
A
IDM
Drain Current-Single Plused
5
A
PD
Total Dissipation @TC=25℃
36
W
Tj
Max. Operating Junction Temperature -55~150 ℃
Tstg
Storage Temperature
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
3.5
℃/W
Rth j-a Thermal Resistance,Junction to Ambient
80
℃/W
IRF710
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc N-Channel
Mosfet Transistor
IRF710
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)DSS Drain-Source Breakdown
Voltage
VGS(th) Gate Threshold
Voltage
RDS(on) Drain-Source On-Resistance
IGSS
Gate-Body Leakage Current
IDSS
Zero Gate
Voltage Drain Current
VSD
Forward On-
Voltage
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
CONDITIONS VGS= 0; ID= 0.25mA VDS= VGS; ID= 0.25mA VGS= 10V; ID= 1.1A VGS= ±20V;VDS= ...
