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IRF7316QPBF Datasheet

Power MOSFET

l Advanced Process Technology l Ultra Low On-Resistance l Dual P- Channel MOSFET l Surface Mount l Available in Tape & Reel l 150°C Operating Temperature l Lead-Free Description These HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low onresistance per silicon area. Additional features of.

International Rectifier
IRF7316QPBF.pdf

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International Rectifier IRF7316QPBF Datasheet
l Advanced Process Technology l Ultra Low On-Resistance l Dual P- Channel MOSFET l Surface Mount l Available in Tape & Reel l 150°C Operating Temperature l Lead-Free Description These HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low onresistance per silicon area. Additional features of these HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. The efficient SO-8 package provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel. PD - 96126A IRF7316QPbF HEXFET® Power MOSFET S1 1 G1 2 8 D1 7 D1 VDSS = -30V S2 3 6 D2 G2 4 5 D2 RDS(on) = 0.058Ω Top V.





l Advanced Process Technology l Ultra Low On-Resistance l Dual P- Channel MOSFET l Surface Mount l Available in Tape & Reel l 150°C Operating Temperature l Lead-Free Description These HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low onresistance per silicon area. Additional features of.

International Rectifier
IRF7316QPBF.pdf

Preview
Preview


Preview

International Rectifier IRF7316QPBF Datasheet
l Advanced Process Technology l Ultra Low On-Resistance l Dual P- Channel MOSFET l Surface Mount l Available in Tape & Reel l 150°C Operating Temperature l Lead-Free Description These HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low onresistance per silicon area. Additional features of these HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. The efficient SO-8 package provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel. PD - 96126A IRF7316QPbF HEXFET® Power MOSFET S1 1 G1 2 8 D1 7 D1 VDSS = -30V S2 3 6 D2 G2 4 5 D2 RDS(on) = 0.058Ω Top V.







 

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