| DatasheetsPDF.com |
IRF7316QPBF MOSFET Datasheet PDFPower MOSFET Power MOSFET |
　
　
　
| Part Number | IRF7316QPBF |
|---|---|
| Description | Power MOSFET |
| Feature | l Advanced Process Technology l Ultra Lo w On-Resistance l Dual P- Channel MOSFE T l Surface Mount l Available in Tape & Reel l 150°C Operating Temperature l Lead-Free
Description
These HEXFET® Po wer MOSFET's in a Dual SO-8 package uti lize the lastest processing techniques to achieve extremely low onresistance p er silicon area. Additional features of these HEXFET Power MOSFET's are a 150 °C junction operating temperature, fast switching speed and improved repetitiv e avalanche rating. These benefits comb ine to make this design an extremely ef ficient and reliable device for use in a wide variety of . |
| Manufacture | International Rectifier |
| Datasheet |
|
|
　
　
　
　
　
　
| Part Number | IRF7316QPBF |
|---|---|
| Description | Power MOSFET |
| Feature | l Advanced Process Technology l Ultra Lo w On-Resistance l Dual P- Channel MOSFE T l Surface Mount l Available in Tape & Reel l 150°C Operating Temperature l Lead-Free
Description
These HEXFET® Po wer MOSFET's in a Dual SO-8 package uti lize the lastest processing techniques to achieve extremely low onresistance p er silicon area. Additional features of these HEXFET Power MOSFET's are a 150 °C junction operating temperature, fast switching speed and improved repetitiv e avalanche rating. These benefits comb ine to make this design an extremely ef ficient and reliable device for use in a wide variety of . |
| Manufacture | International Rectifier |
| Datasheet |
|
|
　
　
　
|
@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact) |