PD - 95297
IRF7321D2PbF
Co-packaged HEXFET® Power MOSFET and Schottky Diode l Ideal For Buck Regulator Applications l P...
PD - 95297
IRF7321D2PbF
Co-packaged HEXFET® Power
MOSFET and Schottky Diode l Ideal For Buck Regulator Applications l P-Channel HEXFET® l Low VF Schottky Rectifier l Generation 5 Technology l SO-8 Footprint l Lead-Free Description
l
FETKY
MOSFET & Schottky Diode
A A S G
1 2 3 4 8 7 6 5
TM
K K D D
VDSS = -30V RDS(on) = 0.062Ω Schottky Vf = 0.52V
Top View
The FETKYTM family of Co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator and power management applications. Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combinining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics. The SO-8 package is designed for vapor phase, infrared or wave soldering techniques.
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SO-8
Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted)
Parameter
ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS dv/dt TJ, TSTG Continuous Drain Current, VGS @ -10V Pulsed Drain Current À Power Dissipation Linear Derating Factor Gate-to-Source
Voltage Peak Diode Recovery dv/dt Á Junction and Storage Temperature Range
Maximum
Units
A
-4.7 -3.8 -38 2.0 1.3 16 ± 20 -5.0 -55 to +150
W mW/°C V...