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IRF7326D2 Datasheet

Part Number IRF7326D2
Manufacturers International Rectifier
Logo International Rectifier
Description FETKY MOSFET / Schottky Diode
Datasheet IRF7326D2 DatasheetIRF7326D2 Datasheet (PDF)

PD - 93763 IRF7326D2 FETKY™ MOSFET / Schottky Diode q q q q q q Co-packaged HEXFET® Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint A A S G 1 8 7 K K D D VDSS = -30V RDS(on) = 0.10Ω Schottky Vf = 0.52V 2 3 6 4 5 Top Vie w Description The FETKY family of co-packaged MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator a.

  IRF7326D2   IRF7326D2






Part Number IRF7326D2PBF
Manufacturers International Rectifier
Logo International Rectifier
Description MOSFET & SCHOTTKY RECTIFIER
Datasheet IRF7326D2 DatasheetIRF7326D2PBF Datasheet (PDF)

• Lead-Free PD - 95311 IRF7326D2PbF www.irf.com 1 10/13/04 IRF7326D2PbF 2 www.irf.com IRF7326D2PbF www.irf.com 3 IRF7326D2PbF 4 www.irf.com IRF7326D2PbF www.irf.com 5 IRF7326D2PbF 6 www.irf.com IRF7326D2PbF SO-8 (Fetky) Package Outline D A5 6 E 8765 1234 B H 0.25 [.010] A 6X e e1 A C y DIM INCHES MIN MAX A .0532 .0688 A1 .0040 .0098 b .013 .020 c .0075 .0098 D .189 .1968 E .1497 .1574 e .050 BAS IC e 1 .025 BAS IC H .2284 .2440 K .0099 .0196 L .016 .050 y 0° .

  IRF7326D2   IRF7326D2







FETKY MOSFET / Schottky Diode

PD - 93763 IRF7326D2 FETKY™ MOSFET / Schottky Diode q q q q q q Co-packaged HEXFET® Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint A A S G 1 8 7 K K D D VDSS = -30V RDS(on) = 0.10Ω Schottky Vf = 0.52V 2 3 6 4 5 Top Vie w Description The FETKY family of co-packaged MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. Generation 5 HEXFET Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combinining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. www.DataSheet4U.com S O -8 The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics. The SO-8 package is designed for vapor phase, infrared or wave soldering techniques. Absolute Maximum Ratings (TA = 25°C unless otherwise noted) Parameter ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS dv/dt TJ, TSTG Continuous Drain Current  Pulsed Drain Current Œ Power Dissipation  Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt  Junction and Storage Temperature Range Maximum -3.6 -2.9 -29 2.0 1.3 16 ± 20 -5.0 -55 to +150 Units A W mW/°C V V/ns .


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