PD - 95042
IRF7329PbF
HEXFET® Power MOSFET
l l l l l l
Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET...
PD - 95042
IRF7329PbF
HEXFET® Power
MOSFET
l l l l l l
Trench Technology Ultra Low On-Resistance Dual P-Channel
MOSFET Low Profile (<1.8mm) Available in Tape & Reel Lead-Free
VDSS
-12V
RDS(on) max (mW)
17@VGS = -4.5V 21@VGS = -2.5V 30@VGS = -1.8V
ID
±9.2A ±7.4A ±4.6A
Description
New P-Channel HEXFET ® power
MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
S1 G1 S2 G2
1 2 3 4
8 7
D1 D1 D2 D2
6 5
www.DataSheet4U.com
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques.
Top View
SO-8
Absolute Maximum Ratings
Parameter
VDS ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ, TSTG Drain- Source
Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source
Voltage Junction and Storage Temperature Range
Max.
-12 -9.2 -7.4 -37 2....