HEXFET® Power MOSFET
PD - 95301
IRF7403PbF
l Generation V Technology l Ultra Low On-Resistance l N-Channel Mosfet l Su...
HEXFET® Power
MOSFET
PD - 95301
IRF7403PbF
l Generation V Technology l Ultra Low On-Resistance l N-Channel
Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching l Lead-Free
Description
S1 S2 S3 G4
AA 8D 7D 6D 5D
Top View
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.
VDSS = 30V RDS(on) = 0.022Ω
SO-8
Absolute Maximum Ratings
ID @ TA = 25°C ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C
VGS dv/dt TJ, TSTG
Parameter 10 Sec. Pulsed Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source
Voltage Peak Diode Recovery dv/dt Junction and Sto...