IRF740AS

PD- 92005 SMPS MOSFET IRF740AS/L HEXFET® Power MOSFET Applications Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching l VDSS 400V Rds(on) max 0.55Ω ID 10A Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Effective Coss specified ( See AN 1001) l D 2 Pak T O -26 2 Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V† Continuous Drain Current, VGS @ 10V† Pulsed Drain Current † Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ƒ† Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 10 6.3 40 3.1 125 1.0 ± 30 5.9 -55 to + 150 300 (1.6mm from case ) Units A W W/°C V V/ns °C Typical SMPS Topologies: l l Single transistor Flyback Xfmr. Reset Single Transistor Forward Xfmr. Reset ( Both for US Line Input only ) through … are on page 10 Notes  www.irf.com 1 9/14/99 www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com IRF740AS/L Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage ...