MOSFET. IRF7807VPBF Datasheet

IRF7807VPBF Datasheet PDF

Part IRF7807VPBF
Description Power MOSFET
Feature www.DataSheet4U.com PD-95210 IRF7807VPbF • • • • N Channel Application Specific MOSFET Ideal for M.
Manufacture International Rectifier
Datasheet
Download IRF7807VPBF Datasheet

www.DataSheet4U.com PD-95210 IRF7807VPbF • • • • N Channel IRF7807VPBF Datasheet





IRF7807VPBF
www.DataSheet4U.com
PD-95210
IRF7807VPbF
• N Channel Application Specific MOSFET
• Ideal for Mobile DC-DC Converters
• Low Conduction Losses
• Low Switching Losses
•
•
100% RG Tested
Lead-Free
Description
This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The
reduction of conduction and switching losses makes
it ideal for high efficiency DC-DC Converters that
power the latest generation of mobile microprocessors.
A pair of IRF7807V devices provides the best cost/
performance solution for system voltages, such as
3.3V and 5V.
HEXFET® Power MOSFET
SO-8
S1
S2
S3
G4
A
8D
7D
6D
5D
Top View
DEVICE CHARACTERISTICS…
RDS(on)
QG
QSW
QOSS
IRF7807V
17 m
9.5 nC
3.4 nC
12 nC
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
(VGS 4.5V)
™Pulsed Drain Current
TA = 25°C
TA = 70°C
Power Dissipation eÃÃÃÃÃÃÃ TA = 25°C
TA = 70°C
Junction & Storage Temperature Range
Continuous Source Current (Body Diode)
™Pulsed Source Current
Thermal Resistance
Parameter
ehMaximum Junction-to-Ambient
hMaximum Junction-to-Lead
Symbol
VDS
VGS
ID
IDM
PD
TJ , TSTG
IS
ISM
Symbol
RθJA
RθJL
IRF7807V
30
±20
8.3
6.6
66
2.5
1.6
-55 to 150
2.5
66
Units
V
A
W
°C
A
Typ
–––
–––
Max
50
20
Units
°C/W
11/3/04



IRF7807VPBF
IRF7807VPbF
Electrical Characteristics
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Gate Threshold Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current*
Total Gate Charge*
Pre-Vth Gate-Source Charge
Post-Vth Gate-Source Charge
Gate-to-Drain Charge
Switch Charge (Qgs2 + Qgd)
Output Charge*
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Symbol
BVDSS
RDS(on)
VGS(th)
IDSS
IGSS
QG
QGS1
QGS2
QGD
QSW
QOSS
RG
td(on)
tr
td(off)
tf
Min
30
–––
1.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.9
–––
–––
–––
–––
Typ Max Units
Conditions
––– ––– V VGS = 0V, ID = 250µA
d17 25 mVGS = 4.5V, ID = 7.0A
––– 3.0 V VDS = VGS, ID = 250µA
––– 100
VDS = 30V, VGS = 0
––– 20 µA VDS = 24V, VGS = 0
––– 100
VDS = 24V, VGS = 0, TJ = 100°C
––– ±100 nA VGS = ± 20V
9.5 14
VGS = 5V, ID = 7.0A
2.3 –––
VDS = 16V
1.0 –––
2.4 –––
nC
3.4 5.2
12 16.8
––– 2.8
6.3 –––
1.2 –––
11 –––
2.2 –––
VDS = 16V, VGS = 0
VDD = 16V
ns ID = 7A
VGS = 5V, RG = 2
Resistive Load
Source-Drain Ratings and Characteristics
Parameter
Diode Forward Voltage*
Symbol Min Typ Max Units
Conditions
dVSD ––– ––– 1.2 V IS = 7.0A ,VGS = 0V
fReverse Recovery Charge
fReverse Recovery Charge
(with Parallel Schottsky)
Qrr
Qrr(s)
––– 64 –––
di/dt = 700A/µs
nC VDS = 16V, VGS = 0V, IS = 7.0A
––– 41 –––
di/dt = 700A/µs , (with 10BQ040)
VDS = 16V, VGS = 0V, IS = 7.0A
Notes: 
‚
ƒ
„
…
†
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width 400 µs; duty cycle 2%.
When mounted on 1 inch square copper board
Typ = measured
Typical values of
-RQDoSs(son)
measured at VGS = 5.0V,
measured
IF = 7.0A.
at
VGS
=
4.5V,
QG,
QSW
and
QOSS
Rθ is measured at TJ approximately 90°C
* Device are 100% tested to these parameters.
2 www.irf.com




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