IRF7811AVPbF

IRF7811APVD-P95b26F5 IRF7811AVPbF N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Minimizes Parallel MOSFETs for high current applications 100% RG Tested Lead-Free Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors. The IRF7811AV has been optimized for all parameters that are critical in synchronous buck converters including RDS(on), gate charge and Cdv/dt-induced turn-on immunity. The IRF7811AV offers an extremely low combination of Qsw & RDS(on) for reduced losses in both control and synchronous FET applications. The package is designed for vapor phase, infra-red, convection, or wave soldering techniques. Power dissipation of greater than 2W is possible in a typical PCB mount application. Absolute Maximum Ratings Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Output Current (VGS ≥ 4.5V) ™Pulsed Drain Current TA = 25°C TL = 90°C Power Dissipation eÃÃÃÃÃÃÃÃÃÃTA = 25°C TL = 90°C Junction & Storage Temperature Range Continuous Source Current (Body Diode) ™Pulsed Source Current SO-8 S1 S2 S3 G4 AA 8D 7D 6D 5D Top View DEVICE CHARACTERISTICS… RDS(on) QG QSW QOSS IRF7811AV 11 mΩ 17 nC 6.7 nC 8.1 nC Symbol VDS VGS ID IDM ...