IRF7N60
POWER MOSFET
GENERAL DESCRIPTION
This high voltage MOSFET uses an advanced termination scheme to provide enhance...
IRF7N60
POWER
MOSFET
GENERAL DESCRIPTION
This high
voltage MOSFET uses an advanced termination scheme to provide enhanced
voltage-blocking capability without degrading performance over time. In addition, this advanced
MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high
voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected
voltage transients.
FEATURES
Robust High
Voltage Termination Avalanche Energy Specified Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS Specified at Elevated Temperature
PIN CONFIGURATION
TO-220/TO-220FP
SYMBOL
D
Front View
G ATE
SO URCE
DRAIN
G
S
1 2 3
N-Channel
MOSFET
ABSOLUTE MAXIMUM RATINGS
Rating Drain to Current Ё Continuous Ё Pulsed Gate-to-Source
Voltage Ё Continue Ё Non-repetitive Total Power Dissipation TO-220 TO-220FP Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy Ё TJ = 25к (VDD = 100V, VGS = 10V, IL = 7A, L = 10mH, RG = 25ȍ) Thermal Resistance Ё Junction to Case Ё Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/...