IRF8308MPBF

IRF8308MPbF DirectFET™ Power MOSFET ‚ l RoHs Compliant Containing No Lead and Bromide  Typical values (unless otherwise specified) l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible  l Ultra Low Package Inductance l Optimized for High Frequency Switching  VDSS VGS RDS(on) RDS(on) 30V max ±20V max 1.9mΩ@ 10V 2.7mΩ@ 4.5V Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) l Ideal for CPU Core DC-DC Converters 28nC 8.2nC 3.5nC 34nC 20nC 1.8V l Optimized for Sync. FET socket of Sync. Buck Converter l Low Conduction and Switching Losses l Compatible with existing Surface Mount Techniques  l 100% Rg tested Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) MX DirectFET™ ISOMETRIC SQ SX ST MQ MX MT MP Description The IRF8308MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest onstate resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF8308MPbF balances both low resistance and low charge along with ultra low package inductance...