IRF830AL

PD- 92006A SMPS MOSFET IRF830AS/L HEXFET® Power MOSFET Applications Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply l High Speed Power Switching l VDSS 500V RDS(on) max 1.40Ω ID 5.0A Benefits Low Gate Charge Qg Results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Effective Coss specified (See AN 1001) l D2Pak TO-262 Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V† Continuous Drain Current, VGS @ 10V† Pulsed Drain Current † Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ƒ† Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 5.0 3.2 20 3.1 74 0.59 ± 30 5.3 -55 to + 150 300 (1.6mm from case ) Units A W W/°C V V/ns °C Typical SMPS Topologies: l l Two Transistor Forward Half Bridge and Full Bridge Notes  through … are on page 10 www.irf.com 1 5/4/00 IRF830AS/L Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 500 ––– ––– 2.0 ––– ––– ––– ––– Typ. ––– 0.60 ––...