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IRF830L Datasheet

Part Number IRF830L
Manufacturers Vishay
Logo Vishay
Description Power MOSFET
Datasheet IRF830L DatasheetIRF830L Datasheet (PDF)

www.vishay.com IRF830S, SiHF830S, IRF830L, SiHF830L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS = 10 V 38 5.0 22 Single I2PAK (TO-262) D2PAK (TO-263) 1.5 D G DS G D S G S N-Channel MOSFET FEATURES • Surface mount • Available in tape and reel • Dynamic dV/dt rating • Repetitive avalanche rated Available • Fast switching • Ease of paralleling Available • Simple drive requirements • Material categoriza.

  IRF830L   IRF830L






Part Number IRF830S
Manufacturers Vishay
Logo Vishay
Description Power MOSFET
Datasheet IRF830L DatasheetIRF830S Datasheet (PDF)

www.vishay.com IRF830S, SiHF830S, IRF830L, SiHF830L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS = 10 V 38 5.0 22 Single I2PAK (TO-262) D2PAK (TO-263) 1.5 D G DS G D S G S N-Channel MOSFET FEATURES • Surface mount • Available in tape and reel • Dynamic dV/dt rating • Repetitive avalanche rated Available • Fast switching • Ease of paralleling Available • Simple drive requirements • Material categoriza.

  IRF830L   IRF830L







Part Number IRF830S
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet IRF830L DatasheetIRF830S Datasheet (PDF)

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  IRF830L   IRF830L







Part Number IRF830PBF
Manufacturers International Rectifier
Logo International Rectifier
Description POWER MOSFET
Datasheet IRF830L DatasheetIRF830PBF Datasheet (PDF)

• Lead-Free PD - 94881 IRF830PbF www.irf.com 1 12/10/03 IRF830PbF 2 www.irf.com IRF830PbF www.irf.com 3 IRF830PbF 4 www.irf.com IRF830PbF www.irf.com 5 IRF830PbF 6 www.irf.com IRF830PbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) 3.78 (.149) 3.54 (.139) -A- 15.24 (.600) 14.84 (.584) 6.47 (.255) 4 6.10 (.240) 1 23 1.15 (.045) MIN 14.09 (.555) 13.47 (.530) 4.06 (.160) 3.55 (.140) 4.69 (.185) 4.20 (..

  IRF830L   IRF830L







Part Number IRF830PBF
Manufacturers Thinki Semiconductor
Logo Thinki Semiconductor
Description N-Channel Type Power MOSFET
Datasheet IRF830L DatasheetIRF830PBF Datasheet (PDF)

IRF830PBF ® Pb Free Plating Product IRF830PBF Pb 5.0A,500V Heatsink N-Channel Type Power MOSFET Features ̰ RDS(on) (Max 1.5 ˟ )@VGS=10V ̰ Gate Charge (Typical 18.5nC) ̰ Improved dv/dt Capability ̰ High ruggedness ̰ 100% Avalanche Tested 1. Gate { { 2. Drain ̻ ඔ̵ ̻ ̻ { 3. Source BVDSS = 500V RDS(ON) = 1.5 ohm ID = 5.0A General Description This N-channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced planar stripe, DMOS technology intended for off-line.

  IRF830L   IRF830L







Part Number IRF830P-HF-3
Manufacturers Advanced Power Electronics
Logo Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet IRF830L DatasheetIRF830P-HF-3 Datasheet (PDF)

Advanced Power Electronics Corp. IRF830P-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement Low On-resistance Fast Switching Performance RoHS-compliant, Halogen-free G S D BV DSS RDS(ON) ID 500V 1.5Ω 4.5A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The IRF830P-3 is in the TO-220 through-hole package which is widely used in commercial and industrial applications whe.

  IRF830L   IRF830L







Power MOSFET

www.vishay.com IRF830S, SiHF830S, IRF830L, SiHF830L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS = 10 V 38 5.0 22 Single I2PAK (TO-262) D2PAK (TO-263) 1.5 D G DS G D S G S N-Channel MOSFET FEATURES • Surface mount • Available in tape and reel • Dynamic dV/dt rating • Repetitive avalanche rated Available • Fast switching • Ease of paralleling Available • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details. DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. ORDERING INFORMATION Package Lead (Pb)-free and halogen-free Lead (Pb)-f.


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