PD - 96196
www.DataSheet4U.com
IRF8513PbF
HEXFET® Power MOSFET
Applications l Dual SO-8 MOSFET for POL Converters in N...
PD - 96196
www.DataSheet4U.com
IRF8513PbF
HEXFET® Power
MOSFET
Applications l Dual SO-8
MOSFET for POL Converters in Notebook Computers, Servers, Graphics Cards, Game Consoles and Set-Top Box Benefits l Low Gate Charge and Low RDS(on) l Fully Characterized Avalanche
Voltage and Current l 20V VGS Max. Gate Rating l 100% Tested for RG l Lead-Free (Qualified to 260°C Reflow) l RoHS Compliant (Halogen Free)
V DSS
30V
R DS(on) max
Q1 15.5m @VGS = 10V Q2 12.7m @VGS = 10V
: :
ID
8.0A 11A
B
9 T ÃÃ9! T ÃÃ9! T ÃÃ9!
SO-8
T! T! B!
Description
The IRF8513PbF incorporates the latest HEXFET Power
MOSFET Silicon Technology into the industry standard SO-8 package. The IRF8513PbF has been optimized for parameters that are critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors for notebook and Netcom applications.
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ TSTG Drain-to-Source
Voltage Gate-to-Source
Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
Q1 Max.
30 ± 20 8.0 6.2 64 1.5 1.05 0.01
Q2 Max.
Units
V
c
Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range
11 9.0 88 2.4 1.68 0.02 -55 to + 175...