IRF8513PBF

PD - 96196 www.DataSheet4U.com IRF8513PbF HEXFET® Power MOSFET Applications l Dual SO-8 MOSFET for POL Converters in Notebook Computers, Servers, Graphics Cards, Game Consoles and Set-Top Box Benefits l Low Gate Charge and Low RDS(on) l Fully Characterized Avalanche Voltage and Current l 20V VGS Max. Gate Rating l 100% Tested for RG l Lead-Free (Qualified to 260°C Reflow) l RoHS Compliant (Halogen Free) V DSS 30V R DS(on) max Q1 15.5m @VGS = 10V Q2 12.7m @VGS = 10V : : ID 8.0A 11A B      9 T ÃÃ9! T ÃÃ9! T ÃÃ9! SO-8 T!  T!  B!  Description The IRF8513PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package. The IRF8513PbF has been optimized for parameters that are critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors for notebook and Netcom applications. Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Q1 Max. 30 ± 20 8.0 6.2 64 1.5 1.05 0.01 Q2 Max. Units V c Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range 11 9.0 88 2.4 1.68 0.02 -55 to + 175...