IRF8788PBF

www.DataSheet4U.com PD - 97137A IRF8788PbF Applications Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters l HEXFET® Power MOSFET VDSS RDS(on) max Qg 30V 2.8m:@VGS = 10V 44nC A A D D D D Benefits l l l l l l l Very Low Gate Charge Very Low RDS(on) at 4.5V VGS Ultra-Low Gate Impedance Fully Characterized Avalanche Voltage and Current 20V VGS Max. Gate Rating 100% tested for Rg Lead-Free S S S G 1 2 3 4 8 7 6 5 Top View SO-8 Description The IRF8788PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package. The IRF8788PbF has been optimized for parameters that are critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors for notebook and Netcom applications. Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Max. 30 ±20 24 19 190 2.5 1.6 0.02 -55 to + 150 Units V c A Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range W W/°C °C Thermal Resistance RθJL RθJA g Junction-to-Ambient fg Junction-to-Drain Lead Par...