IRF9140
Data Sheet February 1999 File Number
2278.3
-19A, -100V, 0.200 Ohm, P-Channel Power MOSFET
These are P-Channel ...
IRF9140
Data Sheet February 1999 File Number
2278.3
-19A, -100V, 0.200 Ohm, P-Channel Power
MOSFET
These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power
MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17521.
Features
-19A, -100V rDS(ON) = 0.200Ω Single Pulse Avalanche Energy Rated SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
Ordering Information
PART NUMBER IRF9140 PACKAGE TO-204AA BRAND IRF9140
Symbol
D
NOTE: When ordering, include the entire part number.
G
S
Packaging
JEDEC TO-204AA
DRAIN (FLANGE)
SOURCE (PIN 2) GATE (PIN 1)
5-14
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
IRF9140
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified IRF9140 -100 -100 -19 -12 -76 ±20 125 1 960 -55 to 1...