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IRF9520S Datasheet

Part Number IRF9520S
Manufacturers Vishay
Logo Vishay
Description Power MOSFET
Datasheet IRF9520S DatasheetIRF9520S Datasheet (PDF)

Power MOSFET IRF9520S, SiHF9520S Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) - 100 VGS = - 10 V 18 Qgs (nC) 3.0 Qgd (nC) 9.0 Configuration Single D2PAK (TO-263) S 0.60 G GD S D P-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb)-free Note a. See device orientation. D2PAK (TO-263) SiHF9520S-GE3 IRF9520SPbF SiHF9520S-E3 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape an.

  IRF9520S   IRF9520S






Part Number IRF9520NSPBF
Manufacturers International Rectifier
Logo International Rectifier
Description HEXFET Power MOSFET
Datasheet IRF9520S DatasheetIRF9520NSPBF Datasheet (PDF)

PD- 95764 IRF9520NSPbF IF9520NLPbF • Lead-Free www.irf.com 1 04/26/05 IRF9520NS/LPbF 2 www.irf.com IRF9520NS/LPbF www.irf.com 3 IRF9520NS/LPbF 4 www.irf.com IRF9520NS/LPbF www.irf.com 5 IRF9520NS/LPbF 6 www.irf.com IRF9520NS/LPbF www.irf.com 7 IRF9520NS/LPbF D2Pak Package Outline (Dimensions are shown in millimeters (inches) D2Pak Part Marking Information T HIS IS AN IRF530S WIT H LOT CODE 8024 ASS EMBLED ON WW 02, 2000 IN T HE ASS EMBLY LINE "L" INT ERNAT IONAL RECT IFIE.

  IRF9520S   IRF9520S







Part Number IRF9520NS
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet IRF9520S DatasheetIRF9520NS Datasheet (PDF)

PD -91522A IRF9520NS/L HEXFET® Power MOSFET Advanced Process Technology Surface Mount (IRF9520S) l Low-profile through-hole (IRF9520L) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l l D VDSS = -100V RDS(on) = 0.48Ω G ID = -6.8A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedi.

  IRF9520S   IRF9520S







Part Number IRF9520NPBF
Manufacturers International Rectifier
Logo International Rectifier
Description HEXFET POWER MOSFET
Datasheet IRF9520S DatasheetIRF9520NPBF Datasheet (PDF)

www.DataSheet4U.com PD - 95411 IRF9520NPbF l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Lead-Free HEXFET® Power MOSFET D VDSS = -100V RDS(on) = 0.48Ω G S ID = -6.8A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized devi.

  IRF9520S   IRF9520S







Part Number IRF9520NL
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet IRF9520S DatasheetIRF9520NL Datasheet (PDF)

PD -91522A IRF9520NS/L HEXFET® Power MOSFET Advanced Process Technology Surface Mount (IRF9520S) l Low-profile through-hole (IRF9520L) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l l D VDSS = -100V RDS(on) = 0.48Ω G ID = -6.8A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedi.

  IRF9520S   IRF9520S







Power MOSFET

Power MOSFET IRF9520S, SiHF9520S Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) - 100 VGS = - 10 V 18 Qgs (nC) 3.0 Qgd (nC) 9.0 Configuration Single D2PAK (TO-263) S 0.60 G GD S D P-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb)-free Note a. See device orientation. D2PAK (TO-263) SiHF9520S-GE3 IRF9520SPbF SiHF9520S-E3 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • P-Channel • 175 °C Operating Temperature • Fast Switching • Compliant to RoHS Directive 2002/95/EC DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. D2PAK (TO-263) SiHF9520STRL-GE3a IRF9520STRLPbFa SiHF9520STL-E3a D2PAK (TO-263) SiHF9520STRR-GE3a IRF9520STRRPbFa SiHF9520STR-E3a ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Volt.


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