IRF9952PBF

PD - 95135 IRF9952PbF l l l l l l l Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated Lead-Free HEXFET® Power MOSFET S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 2 7 D1 D1 D2 D2 N-Ch P-Ch VDSS 30V -30V 3 6 4 5 P-CHANNEL MOSFET Top View RDS(on) 0.10Ω 0.25Ω Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Recommended upgrade: IRF7309 or IRF7319 Lower profile/smaller equivalent: IRF7509 SO-8 Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current… TA = 25°C TA = 70°C V DS V GS ID IDM IS PD EAS IAR EAR dv/dt TJ, TSTG N-Channel Maximum P-Channel 30 ± 20 -2.3 -1.8 -10 -1.3 2.0 1.3 Units V Pulsed Drain Current Continuous Source Current (Diode Condu...