PD - 95855
SMPS MOSFET IRFB16N50K
Applications
l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High ...
PD - 95855
SMPS
MOSFET IRFB16N50K
Applications
l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency
Circuits
Benefits
l Low Gate Charge Qg results in Simple Drive Requirement
l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
l Fully Characterized Capacitance and Avalanche
Voltage and Current
l Low RDS(on)
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
cID @ TC = 100°C Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current PD @TC = 25°C Power Dissipation
VGS
dv/dt TJ TSTG
Linear Derating Factor Gate-to-Source
Voltage
ePeak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
HEXFET® Power
MOSFET
VDSS RDS(on) typ. ID
500V
285m:
17A
S D G TO-220AB
Max. 17 11 68 280 2.3 ± 30 8.0
-55 to + 150
300 (1.6mm from case )
y y10 lbf in (1.1N m)
Units
A
W W/°C
V V/ns
°C
Avalanche Characteristics
Parameter
dEAS Single Pulse Avalanche Energy
ÃcIAR Avalanche Current
cEAR Repetitive Avalanche Energy
Typ. ––– ––– –––
Max. 310 17 28
Units mJ A mJ
Thermal Resistance
Parameter
RθJC RθCS
Junction-to-Case Case-to-Sink, Flat, Greased Surface
RθJA Junction-to-Ambient
www.irf.com
Typ. ––– 0.50 –––
Max. 0.44 ––– 62
Units °C/W
1
03/11/04
IRFB16N50K
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Sou...