isc N-Channel MOSFET Transistor
IRFB3207ZG,IIRFB3207ZG
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤4.1mΩ ·E...
isc N-Channel
MOSFET Transistor
IRFB3207ZG,IIRFB3207ZG
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤4.1mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·reliable device for use in a wide variety of applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source
Voltage
75
VGS
Gate-Source
Voltage
±20
ID
Drain Current-Continuous
120
IDM
Drain Current-Single Pulsed
670
PD
Total Dissipation @TC=25℃
300
Tj
Max. Operating Junction Temperature
175
Tstg
Storage Temperature
-55~175
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX 0.5 62
UNIT ℃/W ℃/W
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isc N-Channel
MOSFET Transistor
IRFB3207ZG,IIRFB3207ZG
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVDSS
Drain-Source Breakdown
Voltage VGS=0V; ID =250μA
VGS(th)
Gate Threshold
Voltage
VDS=VGS; ID =150μA
RDS(on)
Drain-Source On-Resistance
VGS=10V; ID=75A
IGSS
Gate-Source Leakage Current
VGS=±20V
IDSS
Drain-Source Leakage Current
VDS=75V; VGS= 0V
VSD
Diode forward
voltage
IS=75A, VGS = 0V
MIN TYP MAX UNIT
75
V
2
4
V
4.1 mΩ
±0.1 μA
20
μA
1.3
V
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