IRFB3407ZPbF

IRFB3407ZPbF Applications HEXFET® Power MOSFET l Battery Management l High Speed Power Switching D VDSS RDS(on) typ. 75V 5.0mΩ l Hard Switched and High Frequency Circuits G max. ID (Silicon Limited) c 6.4mΩ 122A Benefits S ID (Package Limited) 120A l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness D l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free S D G TO-220AB IRFB3407ZPbF G Gate D Drain S Source Ordering Information Base part number IRFB3407ZPbF Package Type TO-220 Standard Pack Form Quantity Tube 50 Complete Part Number IRFB3407ZPbF Absolute Maximum Ratings Symbol Parameter ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) d Continuous Drain Current, VGS @ 10V (Wire Bond Limited) Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor VGS dv/dt Gate-to-Source Voltage f Peak Diode Recovery TJ TSTG Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Avalanche Characteristics e EAS (Thermally limited) Single Pulse Avalanche Energy Ãd IAR Avalanche Current d EAR Repetitive Avalanche Energy Thermal Resistance Symbol RθJC Parameter j Junction-to-Case RθCS Case-to-Sink, Flat Greased Surface , TO-220 RθJA Junction-to-Ambient, TO-220 M...