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IRFBG20 MOSFET Datasheet PDFPower MOSFET Power MOSFET |
| Part Number | IRFBG20 |
|---|---|
| Description | Power MOSFET |
| Feature | www. vishay. com IRFBG20, SiHFBG20 Vishay Siliconix Power MOSFET PRODUCT SUMMA RY VDS (V) RDS(on) () Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 1000 VGS = 10 V 11 38 4. 9 22 Single D TO-220AB G S D G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb )-free SnPb FEATURES • Dynamic dV/d t rating • Repetitive avalanche rate d • Fast switching • Ease of parall eling Available RoHS* COMPLIANT • S imple drive requirements • Material categorization: for definitions of comp liance please see www. vishay. com/doc?99 912 Note * This datasheet provides information about parts that a . |
| Manufacture | Vishay |
| Datasheet |
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| Part Number | IRFBG20 |
|---|---|
| Description | N-Channel MOSFET |
| Feature | iscN-Channel MOSFET Transistor
IRFBG20
·FEATURES ·Low drain-source on-resis tance:
RDS(ON) = 11Ω (MAX) ·Enhancem ent mode:
Vth = 2 to 4V (VDS = 10 V, ID =0. 25mA) ·100% avalanche tested ·Mini mum Lot-to-Lot variations for robust de vice performance and reliable operation ·DESCRITION ·Switching Voltage Regu lators ·ABSOLUTE MAXIMUM RATINGS(Ta=2 5℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 1000 V VG S Gate-Source Voltage ±20 V ID Dr ain Current-Continuous 1. 4 A IDM Dr ain Current-Single Pulsed 5. 6 A PD Total Dissipation @TC=25℃ 54 W Tj Max. Operating Junction Temp . |
| Manufacture | INCHANGE |
| Datasheet |
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| Part Number | IRFBG20 |
|---|---|
| Description | Power MOSFET |
| Feature | . |
| Manufacture | International Rectifier |
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