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IRFBG20 MOSFET Datasheet PDF

Power MOSFET

Power MOSFET

 

 

 

Part Number IRFBG20
Description Power MOSFET
Feature www.
vishay.
com IRFBG20, SiHFBG20 Vishay Siliconix Power MOSFET PRODUCT SUMMA RY VDS (V) RDS(on) () Qg max.
(nC) Qgs (nC) Qgd (nC) Configuration 1000 VGS = 10 V 11 38 4.
9 22 Single D TO-220AB G S D G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb )-free SnPb FEATURES
• Dynamic dV/d t rating
• Repetitive avalanche rate d
• Fast switching
• Ease of parall eling Available RoHS* COMPLIANT
• S imple drive requirements
• Material categorization: for definitions of comp liance please see www.
vishay.
com/doc?99 912 Note * This datasheet provides information about parts that a .
Manufacture Vishay
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Part Number IRFBG20
Description N-Channel MOSFET
Feature iscN-Channel MOSFET Transistor IRFBG20 ·FEATURES ·Low drain-source on-resis tance: RDS(ON) = 11Ω (MAX) ·Enhancem ent mode: Vth = 2 to 4V (VDS = 10 V, ID =0.
25mA) ·100% avalanche tested ·Mini mum Lot-to-Lot variations for robust de vice performance and reliable operation ·DESCRITION ·Switching Voltage Regu lators ·ABSOLUTE MAXIMUM RATINGS(Ta=2 5℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 1000 V VG S Gate-Source Voltage ±20 V ID Dr ain Current-Continuous 1.
4 A IDM Dr ain Current-Single Pulsed 5.
6 A PD Total Dissipation @TC=25℃ 54 W Tj Max.
Operating Junction Temp .
Manufacture INCHANGE
Datasheet
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IRFBG20

 

 

 


 

 

 

Part Number IRFBG20
Description Power MOSFET
Feature .
Manufacture International Rectifier
Datasheet
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