IRFD123

Power MOSFET IRFD123, SiHFD123 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 100 VGS = 10 V 16 4.4 7.7 Single D 0.27 HVMDIP S G D G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES Dynamic dV/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable 175 °C Operating Temperature Fast Switching Ease of Paralleling Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1" pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W. HVMDIP IRFD123PbF SiHFD123-E3 IRFD123 ...