IRFD1Z0

Semiconductor July 1998 IRFD1Z0, IRFD1Z1, IRFD1Z2, IRFD1Z3 0.4A and 0.5A, 60V and 100V, 2.4 and 3.2 Ohm, N-Channel Power MOSFETs Features 0.4A and 0.5A, 60V and 100V rDS(ON) = 2.4Ω and 3.2Ω SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Majority Carrier Device Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Description These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. They can be operated directly from integrated circuits. Formerly developmental type TA17451. Symbol D Ordering Information PART NUMBER PACKAGE BRAND IRFD1Z0 HEXDIP IRFD1Z0 IRFD1Z1 HEXDIP IRFD1Z1 IRFD1Z2 HEXDIP IRFD1Z...