IRFE130
MECHANICAL DATA Dimensions in mm (inches)
N–CHANNEL POWER MOSFET
≈ 2.16 (0.085)
1.27 (0.050) 1.07 (0.040)
9....
IRFE130
MECHANICAL DATA Dimensions in mm (inches)
N–CHANNEL POWER
MOSFET
≈ 2.16 (0.085)
1.27 (0.050) 1.07 (0.040)
9.14 (0.360) 8.64 (0.340)
12 13 14 15 16
1.39 (0.055) 1.02 (0.040)
11
7.62 (0.300) 7.12 (0.280)
17 18 1 2
0.76 (0.030) 0.51 (0.020)
10 9 8
VDSS ID(cont) RDS(on)
FEATURES
100V 7.44A 0.207Ω
7
6
5
4
3
1.65 (0.065) 1.40 (0.055)
0.33 (0.013) Rad. 0.08 (0.003)
SURFACE MOUNT SMALL FOORPRINT HERMETICALLY SEALED DYNAMIC dv/dt RATING
1.39 (0.055) 1.15 (0.045)
0.43 (0.017) 0.18 (0.007 Rad.
LCC4
MOSFET
GATE DRAIN SOURCE
AVALANCHE ENERGY RATING PINS
4,5 1,2,15,16,17,18 6,7,8,9,10,11,12,13
TRANSISTOR
BASE COLLECTOR EMITTER
SIMPLE DRIVE REQUIREMENTS LIGHTWEIGHT
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VGS ID ID IDM PD EAS dv/dt TJ , Tstg Gate – Source
Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Power Dissipation @ Tcase = 25°C Linear Derating Factor Single Pulse Avalanche Energy Peak Diode Recovery 3 Operating and Storage Temperature Range Surface Temperature ( for 5 sec).
2
±20V (VGS = 10V , Tcase = 25°C) (VGS = 10V , Tcase = 100°C) 7.4A 4.7A 30A 22W 0.17W/°C 75mJ 5.5V/ns -55 to +150°C 300°C
Notes 1) Pulse Test: Pulse Width ≤ 300µs, δ ≤ 2% 2) @ VDD = 50V , L ≥ 570µH , RG = 25Ω , Peak IL = 14A , Starting TJ = 25°C 3) @ ISD ≤ 14A , di/dt ≤ 140A/µs , VDD ≤ BVDSS , TJ ≤ 150°C , Suggested RG = 7.5Ω
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