( DataSheet : www.DataSheet4U.com )
PD - 90388
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET TRANSISTORS THRU-HOLE (TO-...
( DataSheet : www.DataSheet4U.com )
PD - 90388
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET TRANSISTORS THRU-HOLE (TO-205AF)
Product Summary
Part Number BVDSS RDS(on) IRFF9110 -100V 1.2Ω ID -2.5A
IRFF9110 100V, P-CHANNEL
The HEXFET technology is the key to International Rectifier’s advanced line of power
MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance. The HEXFET transistors also feature all of the well established advantages of
MOSFETs such as
voltage control, very fast switching, ease of parelleling and temperature stability of the electrical parameters. They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio
amplifiers and high energy pulse circuits.
TO-39
Features:
n n n n n
Repetitive Avalanche Ratings Dynamic dv/dt Rating Hermetically Sealed Simple Drive Requirements Ease of Paralleling
Absolute Maximum Ratings
Parameter
ID @ VGS = -10V, TC = 25°C ID @ VGS = -10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS I AR EAR dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source
Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the la...