IRFF9120

IRFF9120 Data Sheet June 1999 File Number 2287.2 4A, 100V, 0.60 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power field effect transistor is designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17501. Features 4A, 100V rDS(ON) = 0.60Ω Single Pulse Avalanche Energy Rated SOA is Power-Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Ordering Information PART NUMBER IRFF9120 NOTE: PACKAGE TO-205AF BRAND IRFF9120 Symbol D When ordering, use the entire part number. G S Packaging JEDEC TO-205AF DRAIN (CASE) SOURCE GATE 4-94 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 IRFF9120 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRFF9120 -100 -100 -4 -16 ±20 20 0.16 370 -55 to 150 300 260 UNITS V V A A V W W/oC mJ oC oC oC Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current, TC = 25oC . ....