REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTORS THRU-HOLE TO-205AF (TO-39)
PD-90550G
IRFF9130 JANTX2N6849 JANT...
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTORS THRU-HOLE TO-205AF (TO-39)
PD-90550G
IRFF9130 JANTX2N6849 JANTXV2N6849
JANS2N6849
100V, P-CHANNEL
REF: MIL-PRF-19500/564
Product Summary
Part Number
BVDSS
IRFF9130
-100V
RDS(on) ID 0.30 -6.5A
Description
The HEXFET® technology is the key to International Rectifier’s HiRel advanced line of power
MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on state resistance combined with high trans conductance.
The HEXFET transistors also feature all of the well established advantages of
MOSFETs such as
voltage control, very fast switching and temperature stability of the electrical parameters.
TO-39
Features
Repetitive Avalanche Ratings Dynamic dv/dt Rating Hermetically Sealed Simple Drive Requirements ESD Rating: Class 1C per MIL-STD-750,
Method 1020
They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio
amplifiers and high energy pulse circuits.
Absolute Maximum Ratings
Symbol
Parameter
Value
ID1 @ VGS = -10V, TC = 25°C Continuous Drain Current
ID2 @ VGS = -10V, TC = 100°C Continuous Drain Current
IDM @ TC = 25°C
Pulsed Drain Current
PD @ TC = 25°C
Maximum Power Dissipation
Linear Derating Factor
VGS EAS
IAR EAR dv/dt
Gate-to-Source
Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt
TJ TSTG
Op...