IRFH4201PbF
HEXFET® Power MOSFET
VDSS RDS(on) max (@ VGS = 10V) (@ VGS = 4.5V) Qg (typical)
ID (@TC (Bottom) = 25°C)
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IRFH4201PbF
HEXFET® Power
MOSFET
VDSS RDS(on) max (@ VGS = 10V) (@ VGS = 4.5V) Qg (typical)
ID (@TC (Bottom) = 25°C)
25 0.95 1.25 46.0
100
V m nC A
PQFN 5X6 mm
Applications
Synchronous Rectifier
MOSFET for Sync Buck Converters Secondary Synchronous Rectifier
MOSFET for isolated DC-DC converters Active ORing and Hot Swap Battery Operated DC Motor Inverters
Features Low RDSon (<0.95 m) Low Thermal Resistance to PCB (<0.8°C/W) Low Profile (<0.9 mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial Qualification
Benefits Lower Conduction Losses Enable better thermal dissipation results in Increased Power Density Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability
Base part number IRFH4201PbF
Package Type PQFN 5mm x 6 mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number IRFH4201TRPbF
Absolute Maximum Ratings
VGS ID @ TA = 25°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C ID @ TC(Bottom) = 25°C
IDM PD @TA = 25°C PD @TC(Bottom) = 25°C
TJ TSTG
Parameter Gate-to-Source
Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V (Source Bonding Technology Limited) Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range
Notes through are on page...