Power MOSFET. IRFI4227PBF Datasheet

IRFI4227PBF Datasheet PDF


Part Number

IRFI4227PBF

Description

Power MOSFET

Manufacture

Infineon

Total Page 9 Pages
Datasheet
Download IRFI4227PBF Datasheet



IRFI4227PBF
 
Features
Advanced Process Technology
Key Parameters Optimized for PDP Sustain,
Energy Recovery and Pass Switch Applications
Low EPULSE Rating to Reduce Power
Dissipation in PDP Sustain, Energy Recovery
and Pass Switch Applications
Low QG for Fast Response
High Repetitive Peak Current Capability for
Reliable Operation
Short Fall & Rise Times for Fast Switching
150°C Operating Junction Temperature for
Improved Ruggedness
Repetitive Avalanche Capability for Robustness and
Reliability
IRFI4227PbF
HEXFET® Power MOSFET
Key Parameters
VDS max
200 V
VDS (Avalanche) typ.
240 V
RDS(ON) typ. @ 10V 21 m
IRP max @ TC= 100°C
47
A
TJ max
150 °C
G
Gate
S
D
G
TO-220 Full-Pak
D
Drain
S
Source
Description
This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch applications in
Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon
area and low EPULSE rating. Additional features of this MOSFET are 150°C operating junction temperature and high
repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable
device for PDP driving applications
Base Part Number
IRFI4227PbF
Package Type
TO-220 Full-Pak
Standard Pack
Form
Quantity
Tube
50
Orderable Part Number
IRFI4227PbF
Absolute Maximum Ratings
Symbol
Parameter
VGS Gate-to-Source Voltage
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C
IDM
IRP @ TC = 100°C
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Repetitive Peak Current
PD @TC = 25°C
Maximum Power Dissipation
PD @TC = 100°C Maximum Power Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
Thermal Resistance  
Symbol
RJC Junction-to-Case
RJA Junction-to-Ambient
Parameter
Max.
± 30
26
17
100
47
46
18
0.37
-40 to + 150
300
10 lbf•in (1.1N•m)
Units
V
A  
W
W/°C
 
°C 
 
 
Typ.
–––
–––
Max.
2.73
65
Units
°C/W
1 2017-04-27

IRFI4227PBF
  IRFI4227PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ.
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
VGS(th)/TJ
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Temp. Coefficient
IDSS Drain-to-Source Leakage Current
IGSS  
gfs
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Trans conductance
200
–––
–––
3.0
–––
–––
–––
–––
–––
47
–––
240
21
–––
-11
–––
–––
–––
–––
–––
Qg Total Gate Charge
Qgd Gate-to-Drain Charge
td(on) Turn-On Delay Time
tr Rise Time
td(off) Turn-Off Delay Time
tf Fall Time
tst Shoot Through Blocking Time
––– 73
––– 21
––– 17
––– 19
––– 11
––– 29
100 –––
EPULSE
Energy per Pulse
––– 570
––– 910
Ciss
Coss
Crss
Coss eff.
LD
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
Internal Drain Inductance
––– 4600
––– 460
––– 91
––– 360
––– 4.5
LS Internal Source Inductance
Avalanche Characteristics 
Parameter
EAS Single Pulse Avalanche Energy 
EAR Repetitive Avalanche Energy
VDS(Avalanche)
Repetitive Avalanche Voltage
IAS Avalanche Current
––– 7.5
Max.
–––
–––
25
5.0
–––
20
1.0
100
-100
–––
110
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Units
Conditions
V VGS = 0V, ID = 250µA
mV/°C Reference to 25°C, ID = 1mA
m VGS = 10V, ID = 17A
V
mV/°C
VDS
=
VGS,
ID
=
250µA
µA VDS = 200V, VGS = 0V
mA  VDS = 200V,VGS = 0V,TJ =150°C
nA  
VGS = 20V
VGS = -20V
S VDS = 25V, ID = 17A
nC
 
ID = 17A,VDS = 100V
VGS = 10V
VDD = 100V, VGS = 10V
ns ID = 17A
RG= 2.5
See Fig. 22
ns VDD = 160V,VGS = 15V,RG= 4.7
L = 220nH, C = 0.4µF, VGS = 15V
µJ
VDD = 160V, RG= 4.7TJ = 25°C
L = 220nH, C = 0.4µF, VGS = 15V
VDD = 160V, RG= 4.7TJ = 100°C
VGS = 0V
pF
 
VDS
ƒ=
= 25V
1.0MHz
VGS = 0V, VDS = 20V to 160V
Between lead,
nH  6frmommp(0ac.2k5aigne.)
and center of die contact
Typ.
–––
–––
240
–––
Max.
54
4.6
–––
16
Units
mJ
V
A
Diode Characteristics
Parameter
IS
@ TC = 25°C
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
93
350
Max. Units
Conditions
26
100
MOSFET symbol
A
showing the
integral reverse
p-n junction diode.
1.3 V TJ = 25°C,IS = 17A,VGS = 0V 
140 ns TJ = 25°C ,IF = 17A, VDD = 50V
520 nC di/dt = 100A/µs 
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
starting TJ = 25°C, L = 0.44mH, RG = 25, IAS = 16A.
Pulse width 400µs; duty cycle 2%.
Rθ is measured at TJ of approximately 90°C.
Half sine wave with duty cycle = 0.25, ton=1μsec.
2 2017-04-27




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