N-Channel MOSFET. IRFI644 Datasheet

IRFI644 Datasheet PDF


Part Number

IRFI644

Description

250V N-Channel MOSFET

Manufacture

Fairchild Semiconductor

Total Page 9 Pages
Datasheet
Download IRFI644 Datasheet



IRFI644
November 2001
IRFW644B / IRFI644B
250V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converter and
switch mode power supplies.
Features
• 14A, 250V, RDS(on) = 0.28@VGS = 10 V
• Low gate charge ( typical 47 nC)
• Low Crss ( typical 30 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
D
D!
GS
D2-PAK
IRFW Series
GDS
I2-PAK
IRFI Series
G!
◀▲
!
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, Tstg
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TA = 25°C) *
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
IRFW644B / IRFI644B
250
14
8.9
56
± 30
480
14
13.9
5.5
3.13
139
1.11
-55 to +150
300
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance, Junction-to-Case
RθJA
Thermal Resistance, Junction-to-Ambient *
RθJA
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ Max
-- 0.9
-- 40
-- 62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
©2001 Fairchild Semiconductor Corporation
Rev. B, November 2001

IRFI644
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
VGS = 0 V, ID = 250 µA
250 --
ID = 250 µA, Referenced to 25°C -- 0.24
IDSS
Zero Gate Voltage Drain Current
VDS = 250 V, VGS = 0 V
VDS = 200 V, TC = 125°C
-- --
-- --
IGSSF
IGSSR
Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V
Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V
-- --
-- --
--
--
10
100
100
-100
V
V/°C
µA
µA
nA
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
2.0 --
4.0
VGS = 10 V, ID = 7.0 A
-- 0.22 0.28
VDS = 40 V, ID = 7.0 A (Note 4) -- 11.7
--
V
S
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 1250 1600
-- 150 195
-- 30
40
pF
pF
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = 125 V, ID = 14 A,
RG = 25
-- 20
50
-- 115 240
-- 150 310
(Note 4, 5)
--
95
200
VDS = 200 V, ID = 14 A,
VGS = 10 V
(Note 4, 5)
--
--
--
47
6.2
23
60
--
--
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
-- -- 14
ISM Maximum Pulsed Drain-Source Diode Forward Current
-- -- 56
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 14 A
-- -- 1.5
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 14 A,
dIF / dt = 100 A/µs
-- 240
(Note 4) -- 1.96
--
--
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 3.9mH, IAS = 14A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 14A, di/dt 300A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
A
A
V
ns
µC
©2001 Fairchild Semiconductor Corporation
Rev. B, November 2001




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