IRFIB7N50L, SiHFIB7N50L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd ...
IRFIB7N50L, SiHFIB7N50L
Vishay Siliconix
Power
MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
500 VGS = 10 V
92 24 44 Single
0.320
TO-220 FULLPAK
D
G
GDS
ORDERING INFORMATION
Package Lead (Pb)-free
S N-Channel
MOSFET
FEATURES
Super Fast Body Diode Eliminates the Need for External Diodes in ZVS Applications
Lower Gate Charge Results in Simpler Drive Reqirements
RoHS
COMPLIANT
Enhanced dV/dt Capabilities Offer Improved Ruggedness
Higher Gate
Voltage Threshold Offers Improved Noise Immunity
Lead (Pb)-free
APPLICATIONS
Zero
Voltage Switching SMPS Telecom and Server Power Supplies Uninterruptible Power Supplies Motor Control Applications
TO-220 FULLPAK IRFIB7N50LPbF SiHFIB7N50L-E3
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source
Voltage
VDS
Gate-Source
Voltage
VGS
Continuous Drain Current
Pulsed Drain Currenta Linear Derating Factor
VGS at 10 V
TC = 25 °C TC = 100 °C
ID IDM
Single Pulse Avalanche Energyb Avalanche Currenta Repetitive Avalanche Energya
EAS IAR EAR
Maximum Power Dissipation Peak Diode Recovery dV/dtc
TC = 25 °C
PD dV/dt
Operating Junction and Storage Temperature Range
TJ, Tstg
Soldering Recommendations (Peak Temperature)
for 10 s
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 12). b. Starting TJ = 25 °C, L = 24 mH, RG = 25 Ω, IAS = 6.8 A (see fig. 14)....