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IRFP1405 MOSFET Datasheet PDF

N-Channel MOSFET

N-Channel MOSFET

 

 

 

Part Number IRFP1405
Description N-Channel MOSFET
Feature isc N-Channel MOSFET Transistor IRFP140 5,IIRFP1405 ·FEATURES ·Static drai n-source on-resistance: RDS(on)≤5.
3m ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reli able operation ·DESCRITION ·Ultra Lo w On-resistance ·Fast Switching ·ABS OLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 55 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 95 IDM Drain Current-Single Pulsed 640 PD Total Dissipation @TC=25℃ 310 Tj Max.
Operating Junction Temperature 175 Tstg Storage Temperature .
Manufacture INCHANGE
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Part Number IRFP1405
Description AUTOMOTIVE MOSFET
Feature PD - 95810 AUTOMOTIVE MOSFET IRFP1405 HEXFET® Power MOSFET D Features



• Advanced Process Techno logy Ultra Low On-Resistance 175°C Ope rating Temperature Fast Switching Repet itive Avalanche Allowed up to Tjmax VD SS = 55V G S RDS(on) = 5.
3mΩ ID = 95 A Description Specifically designed fo r Automotive applications, this HEXFET Power MOSFET utilizes the latest proc essing techniques to achieve extremely low on-resistance per silicon area.
Add itional features of this design are a 1 75°C junction operating temperature, f ast switching speed and improved repeti tive avalanche rating .
These .
Manufacture International Rectifier
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