PD - 97079B
PDP SWITCH
IRFP4229PbF
Features l Advanced Process Technology l Key Parameters Optimized for PDP Sustain,
Energy Recovery and Pass Switch Applications l Low EPULSE Rating to Reduce Power
Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications l Low QG for Fast Response l High Repetitive Peak Current Capability for Reliable Operation l Short Fall & Rise Times for Fast Switching l175°C Operating Junction Temperature for Improved Ruggedness l Repetitive Avalanche Cap.
Power MOSFET
PD - 97079B
PDP SWITCH
IRFP4229PbF
Features l Advanced Process Technology l Key Parameters Optimized for PDP Sustain,
Energy Recovery and Pass Switch Applications l Low EPULSE Rating to Reduce Power
Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications l Low QG for Fast Response l High Repetitive Peak Current Capability for Reliable Operation l Short Fall & Rise Times for Fast Switching l175°C Operating Junction Temperature for Improved Ruggedness l Repetitive Avalanche Capability for Robustness
and Reliability
Key Parameters
VDS min
250
V
VDS (Avalanche) typ. RDS(ON) typ. @ 10V
300
V
38
m:
IRP max @ TC= 100°C
87
A
TJ max
175
°C
D
D
G S
S D G
TO-247AC
G Gate
D Drain
S Source
Description This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch
applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve
low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to
make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
Absolute Maximum Ratings
Parameter
VGS ID @ TC = 25°C ID @ TC = 100°C IDM IRP @ TC = 100°C PD @TC = 25°C PD @TC = 100°C
Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V
c Pulsed Drain Current g Repetitive Peak Cu.