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IRFP4229PBF Datasheet

Part Number IRFP4229PBF
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet IRFP4229PBF DatasheetIRFP4229PBF Datasheet (PDF)

PD - 97079B PDP SWITCH IRFP4229PbF Features l Advanced Process Technology l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications l Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications l Low QG for Fast Response l High Repetitive Peak Current Capability for Reliable Operation l Short Fall & Rise Times for Fast Switching l175°C Operating Junction Temperature for Improved Ruggedness l Repetitive Avalanche Cap.

  IRFP4229PBF   IRFP4229PBF






Power MOSFET

PD - 97079B PDP SWITCH IRFP4229PbF Features l Advanced Process Technology l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications l Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications l Low QG for Fast Response l High Repetitive Peak Current Capability for Reliable Operation l Short Fall & Rise Times for Fast Switching l175°C Operating Junction Temperature for Improved Ruggedness l Repetitive Avalanche Capability for Robustness and Reliability Key Parameters VDS min 250 V VDS (Avalanche) typ. RDS(ON) typ. @ 10V 300 V 38 m: IRP max @ TC= 100°C 87 A TJ max 175 °C D D G S S D G TO-247AC G Gate D Drain S Source Description This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications. Absolute Maximum Ratings Parameter VGS ID @ TC = 25°C ID @ TC = 100°C IDM IRP @ TC = 100°C PD @TC = 25°C PD @TC = 100°C Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V c Pulsed Drain Current g Repetitive Peak Cu.


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