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PD - 96965A
PDP MOSFET
Features l Advanced process technology l Key parameters optimized for PDP S...
www.DataSheet4U.com
PD - 96965A
PDP
MOSFET
Features l Advanced process technology l Key parameters optimized for PDP Sustain & Energy Recovery applications l Low EPULSE rating to reduce the power dissipation in Sustain & ER applications l Low QG for fast response l High repetitive peak current capability for reliable operation l Short fall & rise times for fast switching l175°C operating junction temperature for improved ruggedness l Repetitive avalanche capability for robustness and reliability
IRFP4232PbF
Key Parameters
250 300 30 310 117 175
D
VDS min VDS (Avalanche) typ. RDS(ON) typ. @ 10V EPULSE typ. IRP max @ TC= 100°C TJ max
V V m: µJ A °C
G S
TO-247AC
Description This HEXFET® Power
MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch applications in Plasma Display Panels. This
MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low EPULSE rating. Additional features of this
MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this
MOSFET a highly efficient, robust and reliable device for PDP driving applications.
Absolute Maximum Ratings
Parameter
VGS VGS (TRANSIENT) ID @ TC = 25°C ID @ TC = 100°C IDM IRP @ TC = 100°C PD @TC = 25°C PD @TC = 100°C TJ TSTG Gate-to-Source
Voltage Gate-to-Source
Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current c Repetitive Peak Current g Powe...