www.DataSheet4U.com
PD - 96966A
PDP MOSFET
Features l Advanced process technology l Key parameters optimized for PDP S...
www.DataSheet4U.com
PD - 96966A
PDP
MOSFET
Features l Advanced process technology l Key parameters optimized for PDP Sustain & Energy Recovery applications l Low EPULSE rating to reduce the power dissipation in Sustain & ER applications l Low QG for fast response l High repetitive peak current capability for reliable operation l Short fall & rise times for fast switching l175°C operating junction temperature for improved ruggedness l Repetitive avalanche capability for robustness and reliability
IRFP4242PbF
Key Parameters
300 360 49 93 175
D
D
VDS min VDS (Avalanche) typ. RDS(ON) typ. @ 10V IRP max @ TC= 100°C TJ max
V V m: A °C
G S
G
D
S
TO-247AC
D S
G
Description This HEXFET® Power
MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch applications in Plasma Display Panels. This
MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low EPULSE rating. Additional features of this
MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this
MOSFET a highly efficient, robust and reliable device for PDP driving applications.
G a te
D ra in
S o u rc e
Absolute Maximum Ratings
Parameter
VGS ID @ TC = 25°C ID @ TC = 100°C IDM IRP @ TC = 100°C PD @TC = 25°C PD @TC = 100°C TJ TSTG Gate-to-Source
Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear ...